IRFL014N PBF MOSFET, N, 55V, 1.9A, SOT-223; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:2.7A; Resistance, Rds On:0.16ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:SOT-223; Termination Type:Through Hole; Capacitance, Ciss Typ:190pF; Charge, Qrr Typ @ Tj = 25°C:64nC; Current, Iar:1.7A; Current, Idm Pulse:15A; Current, Idss Max:1.0чA; Depth, External:7.3mm; Energy, Avalanche Repetitive Ear:0.1mJ; Energy, Avalanche Single Pulse Eas:48mJ; Gfs, Min:1.6A/V; Length / Height, External:1.7mm; Marking, SMD:FL014N; Power Dissipation:1.0W; Power Dissipation, on 1 Sq. PCB:1.0W; Power, Pd:1W; Power, Ptot:2.1W; Resistance, Rds on Max:0.16ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:120°C/W; Time, Fall:3.3ns; Time, Rise:7.1ns; Time, trr Typ:41ns; Transistors, No. of:1; Voltage, Vds Max:55V; Voltage, Vgs Max:20V
MOSFET транзистор IRFL014NPBF. Описание в формате PDF